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In this paper, we present the extraction of an equivalent circuit model for PIN diodes and varactors in the millimeter-wave band. This circuit model is useful for new communication applications involving, for example, electronic beam reconfigurability, where diodes are commonly used.

From the measurement at various bias points (varactor) or states (PIN diode), it is possible to extract an equivalent circuit to properly model the behaviour of these devices when used to design reconfigurable elements. The results have been experimentally validated, obtaining excellent agreement between measurements and equivalent circuit models up to 67 GHz.